Title:
HETERO EPITAXIAL JUNCTION ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH04241481
Kind Code:
A
Abstract:
PURPOSE:To provide a hetero epitaxial junction element having stabilized electric characteristics wherein introduction of a defect to an electrode and a thin insulating film themselves or their interfaces is suppressed and a method for fabricating the hetero epitaxial element easily and with good repeatability. CONSTITUTION:A hetero epitaxial junction element comprises a first electrode 41 made of a single crystal aluminum epitaxial film formed on a substrate 36, a thin insulating film 42 made of a single crystal alpha-alumina epitaxial film formed on the surface of the electrode and a second electrode 43 made of a single crystal aluminum epitaxial film formed on the surface of the alpha-alumina epitaxial film.
Inventors:
YAMADA AKIRA
HIRAYAMA HIDEO
KAWAKUBO TAKASHI
MIYAUCHI MASAMI
HIRAYAMA HIDEO
KAWAKUBO TAKASHI
MIYAUCHI MASAMI
Application Number:
JP281091A
Publication Date:
August 28, 1992
Filing Date:
January 14, 1991
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/203; H01L21/28; H01L29/86; H01L29/88; H01L49/00; (IPC1-7): H01L21/203; H01L21/28; H01L29/86; H01L29/88; H01L49/00
Attorney, Agent or Firm:
Takehiko Suzue