PURPOSE: To allow a plurality of impurity layers each of which is different in depth to a semiconductor substrate to be formed by one implantation, in regard to a high energy ion implantation device employed in the device for the manufacture of a semiconductor.

CONSTITUTION: Each device is so constituted that a function 15 introducing reaction gas which forcibly lessen the valences of ions, is provided for high energy implantation devices 11 through 14. Namely, when ions are implanted, each device is so constituted that each impurity layer whose depth to a semiconductor is different, can be formed by one setting in such a way that reaction gas which lessens the valences of ions (for example, B+++ is formed into B++), is introduced.