Title:
HIGH FREQUENCY HIGH OUTPUT TRANSISTOR
Document Type and Number:
Japanese Patent JPH04299606
Kind Code:
A
Abstract:
PURPOSE: To realize a high frequency high output transistor(TR) in which the performance is stabilized and miniaturization is realized and the number of components is reduced and manufacture is performed inexpensively.
CONSTITUTION: In the case of generating a TR chip 1, an electrode section 3 is formed by applying phosphorus diffusion and platinum vapor-deposition to a specific part on a wafer. Gold metallizing is applied to the rear side of the TR chip 1 and it is mounted on a collector pad 2 with die bonding. The electrode section 3 and a MOS capacitor 4a are connected by bonding with a wire 5.
Inventors:
KAGAWA KAZUHISA
Application Number:
JP9160791A
Publication Date:
October 22, 1992
Filing Date:
March 27, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/60; H01L21/28; H01L29/43; H01P5/08; H03F3/60; (IPC1-7): H01L21/60; H01L29/46; H01P5/08; H03F3/60
Attorney, Agent or Firm:
Kenichi Hayase