HIGH FREQUENCY SWITCH CIRCUIT DEVICE - MATSUSHITA ELECTRIC IND CO LTD

Title:

HIGH FREQUENCY SWITCH CIRCUIT DEVICE

Document Type and Number:

Japanese Patent JP2002164441

Kind Code:

A

Abstract:

To provide a high frequency switch circuit device capable of decreasing the transmission loss of a high frequency signal even in the case that it is integrated on one semiconductor substrate together with other semiconductor circuits.

The high frequency switch circuit device is provided with an FET 101 being a switching element on a p type silicon substrate 100. The FET 101 has an n type well 122, a gate electrode 124, a source layer 125 and a drain layer 126. The n type well wiring 129 connected to the n type well layer 122 being a back gate is connected to a voltage supply node 112 through an inductor 103. The flow of a high frequency signal between the voltage supply node 112 and an n type well layer is blocked by an inductor 103, and the flow of the high frequency signal in the vertical direction is blocked by a depletion layer spreading between the n type well and a p type substrate area. In addition, the flow of the high frequency signal in the horizontal direction is blocked by a trench separation insulation layer 121.

Inventors:

NAKATANI TOSHIBUMI
ITO JUNJI
IMANISHI IKUO

Application Number:

JP2000358775A

Publication Date:

June 07, 2002

Filing Date:

November 27, 2000

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/76; H01L21/8234; H01L21/8238; H01L27/06; H01L27/092; H01L29/78; H01L29/786; H03K17/04; H03K17/687; H03K17/693; (IPC1-7): H01L21/8234; H01L21/76; H01L21/8238; H01L27/06; H01L27/092; H01L29/78; H01L29/786; H03K17/04; H03K17/687

Attorney, Agent or Firm:

Hiroshi Maeda (7 outside)

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