Title:
HIGH-FREQUENCY TRANSISTOR AND ITS PACKAGING METHOD
Document Type and Number:
Japanese Patent JPH04288860
Kind Code:
A
Abstract:
PURPOSE: To enable an impedance between a grounding electrode and a ground to be reduced to a negligible level for a high-frequency transistor which is used for a microwave circuit using a microstrip line and its packaging method.
CONSTITUTION: A metallized portion 12 which is electrically connected to a first electrode to be grounded is provided at a transistor package 11 and leads 13 and 14 which are electrically connected to non-grounded second and third electrodes are provided at the transistor package 11 or a lead 17 is connected to only a first electrode to be grounded and then metallize portions 18 and 19 are provided on a transistor package 16 for electrically connection.
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Inventors:
IWATSUKI MASANORI
TOHIRA KAZUSHIRO
TOHIRA KAZUSHIRO
Application Number:
JP5285691A
Publication Date:
October 13, 1992
Filing Date:
March 18, 1991
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L23/12; H01L21/338; H01L23/48; H01L29/812; H01P1/00; H01P5/08; H03F3/60; (IPC1-7): H01L21/338; H01L23/12; H01L23/48; H01L29/812; H01P1/00; H01P5/08; H03F3/60
Attorney, Agent or Firm:
Tadahiko Ito (2 outside)