Title:
HIGH INTEGRATION IC
Document Type and Number:
Japanese Patent JPS5467784
Kind Code:
A
Abstract:
PURPOSE: To increase the scale of integration by eliminating serrations on IC surface as far as possible and removing channel cuts in the IC.
CONSTITUTION: In order to cut off unnecessary paths for electrons or holes, an impurity of high dose is ion-implanted to provide insulation parts 7 of a higher resistance and the thicknesses of gates 2, insulators 6 and conductive members 3 are made equal. The insulation parts 7 are used as the channel cuts of the IC, whereby layout of transistors by reducing the individual spacings therebetween is made possible.
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Inventors:
GEMA NOBUO
Application Number:
JP13436177A
Publication Date:
May 31, 1979
Filing Date:
November 09, 1977
Export Citation:
Assignee:
SEIKO INSTR & ELECTRONICS
International Classes:
H01L27/08; H01L21/76; H01L27/04; H01L29/78; (IPC1-7): H01L21/76; H01L27/04; H01L29/78