Title:
HIGH POLYMER COMPOUND, RESIST MATERIAL AND PATTERN- FORMING METHOD
Document Type and Number:
Japanese Patent JP3844057
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to high energy beams and excellent in the sensitivity, resolution and plasma etching resistance at a wavelength of 200 nm or less, especially 190 nm or less.
SOLUTION: The high polymer compound comprises a recurring unit represented by the formula (I) [R1, R2 and R3 are H, F, an alkyl or a fluorinated alkyl; R4 is H or an alkyl; R5 is a single bond or an alkylene; R6 and R7 are H, F or an alkyl and at least one of them contains a fluorine atom; X is -O-or -C(=O)-O-; R8 is an acid labile group; 0<d+e<5, 0<g+h≤5, 0<(a+b)/(a+b+ c)<1, 0<c/(a+b+c)<0.8].
Inventors:
Jun Hatakeyama
Yuji Harada
Jun Watanabe
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Yuji Harada
Jun Watanabe
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Application Number:
JP2001346933A
Publication Date:
November 08, 2006
Filing Date:
November 13, 2001
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
International Classes:
C08F212/04; G03F7/004; C08F216/14; C08F220/26; G03F7/039; G03F7/38; H01L21/027; (IPC1-7): C08F212/04; C08F216/14; C08F220/26; G03F7/004; G03F7/039; G03F7/38; H01L21/027
Domestic Patent References:
| JP10265528A | ||||
| JP11236416A | ||||
| JP10265524A | ||||
| JP2002220418A | ||||
| JP2002220417A | ||||
| JP2002220419A |
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa
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