Title:
HIGH-SENSITIVITY DETECTION METHOD AND DEVICE OF HEAVY METAL IN SILICON WAFER BULK
Document Type and Number:
Japanese Patent JP3289666
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a detection method and device for simply detecting heavy metal in a silicon wafer bulk with high sensitivity while eliminating a need for a pretreatment such as a heat treatment where a secondary contamination can easily occur.
SOLUTION: By applying an electric field to the surface of a silicon wafer, heavy metal in a wafer bulk is condensed on a surface or near the surface, and then a condensation layer on the surface is subjected to heavy metal analysis using a method and device for detecting the heavy metal in the silicon wafer bulk with high sensitivity. In this case, a means for applying an electric field to the surface of the silicon wafer to condense the heavy metal in the wafer bulk on the surface or near the surface and a means for performing the heavy metal analysis of a wafer surface layer are provided in the method for detecting heavy metal in the silicon wafer bulk with high sensitivity.
Inventors:
Michiko Koide
Yoshinori Hayami
Yoshinori Hayami
Application Number:
JP1637098A
Publication Date:
June 10, 2002
Filing Date:
January 12, 1998
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
G01N23/223; C30B33/00; G01N1/36; G01N23/225; G01N33/00; H01L21/66; (IPC1-7): G01N1/36; C30B33/00; G01N23/223; G01N23/225; G01N33/00; H01L21/66
Domestic Patent References:
| JP9306959A | ||||
| JP9304253A |
Attorney, Agent or Firm:
Mikio Yoshimiya
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