PURPOSE: To contrive an increase in the super-high speed of electron traveling by a method wherein the base region of a transistor and the electron traveling regions of the channel part and so on of an FET are constituted of a superlattice semiconductor superconducting substance.
CONSTITUTION: An N-type PbTe layer and an N-type SnTe layer, each having a thickness of several atom layers, are respectively and alternately adhered on a high-resistance PbTe substrate 1 about 100 layers and a superlattice semiconductor superconducting layer 2 having a superconductivity is formed. PbEuTe layers 3 and 3' are each adhered on emitter electrode and collector electrode forming parts on such the semiconductor superconducting layer 2; moreover a PbTe layer 4 and an Au layer 5 are formed on an emitter electrode, an Au layer 5' is formed on a collector electrode and an Au layer 5" is formed on a base electrode part; and a hot electron transistor is constituted. Therefore, electrons which flow in from the emitter travel through the superconducting layer at very high speed and reach the collector.
NISHIJIMA YOSHITO
EBE KOJI
ISHIZAKI HIROYUKI
