Title:
アバランシェフォトダイオードの評価方法
Document Type and Number:
Japanese Patent JP7331732
Kind Code:
B2
Abstract:
To provide an evaluation method of avalanche photodiode capable of evaluating uniformity in multiplication factor of the avalanche photodiode.SOLUTION: The evaluation method of avalanche photodiode includes: measuring temperature distribution of an avalanche photodiode with reverse bias voltage generating magnification being applied to the avalanche photodiode; and calculating magnification distribution of the avalanche photodiode from the temperature distribution.SELECTED DRAWING: Figure 1
Inventors:
Takashi Ohtsuki
Eitaro Ishimura
Koichi Inoue
Hajime Sasaki
Kadoiwa Kaoru
Eitaro Ishimura
Koichi Inoue
Hajime Sasaki
Kadoiwa Kaoru
Application Number:
JP2020029135A
Publication Date:
August 23, 2023
Filing Date:
February 25, 2020
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
G01R31/26; H01L31/107
Domestic Patent References:
| JP61102783A | ||||
| JP2016502082A | ||||
| JP2004289206A | ||||
| JP201534817A |
Foreign References:
| WO2006046276A1 |
Other References:
山路和樹;笹畑圭史;石村栄太郎,「高感度センサ用大面積AlInAs-APDアレー」,三菱電機技報,2013年02月,Vol. 87,No. 2,pp. 47-50
ISHIMURA, Eitaro; YAGYU, Eiji; NAKAJI,Masaharu; IHARA, Susumu; YOSHIARA, Kiichi; AOYAGI, Toshitaka; TOKUDA, Yasunori;ISHIKAWA, Takahide,“Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes”,Journal of Lightwave Technology,2017年12月17日,Vol. 25, No. 12,pp. 3686-3693,DOI: 10.1109/JLT.2007.909357
SUDO, Hiromi; SUZUKI, Masamitsu,“Surface Degradation Mechanism of InP/InGaAs APD's”, Journal of Lightwave Technology,1988年10月,Vol. 6, No. 10,pp. 1496-1501,DOI: 10.1109/50.7907
高宮三郎;近藤明博;白幡潔,「アバランシュホトダイオードの接合における均一性の限界と定量的評価の一方法」,電子情報通信学会論文誌C,1976年07月25日,Vol. J59-C, No. 7,pp. 458-465
ISHIMURA, Eitaro; YAGYU, Eiji; NAKAJI,Masaharu; IHARA, Susumu; YOSHIARA, Kiichi; AOYAGI, Toshitaka; TOKUDA, Yasunori;ISHIKAWA, Takahide,“Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes”,Journal of Lightwave Technology,2017年12月17日,Vol. 25, No. 12,pp. 3686-3693,DOI: 10.1109/JLT.2007.909357
SUDO, Hiromi; SUZUKI, Masamitsu,“Surface Degradation Mechanism of InP/InGaAs APD's”, Journal of Lightwave Technology,1988年10月,Vol. 6, No. 10,pp. 1496-1501,DOI: 10.1109/50.7907
高宮三郎;近藤明博;白幡潔,「アバランシュホトダイオードの接合における均一性の限界と定量的評価の一方法」,電子情報通信学会論文誌C,1976年07月25日,Vol. J59-C, No. 7,pp. 458-465
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno
Previous Patent: Vehicle electronic mirror system
Next Patent: FITTING CONSTRUCTION OF WALL PANEL AND FLOOR PANEL, BUILDING UNIT AND UNIT BUILDING
Next Patent: FITTING CONSTRUCTION OF WALL PANEL AND FLOOR PANEL, BUILDING UNIT AND UNIT BUILDING