Title:
真空充填式ウェハレベル筐体により高分解能の熱赤外線センサーアレーを製作する方法
Document Type and Number:
Japanese Patent JP7359933
Kind Code:
B2
Abstract:
A method for producing a thermal infrared sensor array in a vacuum-filled wafer-level housing with particularly small dimensions, consisting of at least two wafers, a cover wafer and a central wafer comprising multiple infrared-sensitive sensor pixels on a respective thin slotted membrane over a heat-insulating cavity is disclosed. A method for producing a high-resolution monolithic silicon micromechanical thermopile array sensor using wafer level packaging technology, wherein the sensor achieves a particularly high spatial resolution capability and a very high filling degree with very small housing dimensions, in particular a very low overall thickness, and can be inexpensively produced using standard CMOS processes. This is achieved in that the cover wafer is first rigidly mechanically connected to the provided central wafer comprising the sensor pixels with the infrared-sensitive pixels by means of wafer bonding, and the central wafer is then thinned out from the wafer rear face to a specified thickness.
Inventors:
Seefeldecker Jörg
Hermann Frank
Schmidt Christian
Reneke Wilhelm
Folk board
Gimon Marlion
Schnorr Michael
Hermann Frank
Schmidt Christian
Reneke Wilhelm
Folk board
Gimon Marlion
Schnorr Michael
Application Number:
JP2022500552A
Publication Date:
October 11, 2023
Filing Date:
July 09, 2020
Export Citation:
Assignee:
Heimann Zensol Gesellschaft Mito Beschlenktel Haftung
International Classes:
G01J1/02; H10N10/00; H10N10/01
Domestic Patent References:
| JP2015534642A | ||||
| JP2005241457A | ||||
| JP2019504298A | ||||
| JP2012013661A | ||||
| JP2010056319A | ||||
| JP2005501405A | ||||
| JP201617794A | ||||
| JP20134780A |
Foreign References:
| CN102583220B |
Attorney, Agent or Firm:
Mitsufumi Ezaki
Blacksmith Minoru Sawa
Shinsuke Nakamura
Taisei Ishida
Blacksmith Minoru Sawa
Shinsuke Nakamura
Taisei Ishida