Title:
How to form a photolithography pattern by negative tone development
Document Type and Number:
Japanese Patent JP6118538
Kind Code:
B2
Abstract:
Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I): wherein: R1 represents hydrogen or a C1 to C3 alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.
Inventors:
Yong Chul Bae
Givin Sun
Sun-Hyun Lee
John Kung Park
Cecily Andes
Givin Sun
Sun-Hyun Lee
John Kung Park
Cecily Andes
Application Number:
JP2012243366A
Publication Date:
April 19, 2017
Filing Date:
November 05, 2012
Export Citation:
Assignee:
Rohm and Haas Electronic Materials LLC
International Classes:
G03F7/038; C08F20/28; G03F7/039; G03F7/32
Domestic Patent References:
| JP2011227463A | ||||
| JP2011170316A | ||||
| JP2008281974A | ||||
| JP2012128009A | ||||
| JP2012013961A | ||||
| JP2007272194A | ||||
| JP2005331918A | ||||
| JP2002193895A |
Foreign References:
| WO2011122336A1 | ||||
| WO2011034007A1 |
Attorney, Agent or Firm:
Patent Business Corporation Sender International Patent Office