Title:
可変深さデバイス構造を形成する方法
Document Type and Number:
Japanese Patent JP7384928
Kind Code:
B2
Abstract:
A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.
Inventors:
Labonte, Andrepee.
Godet, Ludovik
Meyer Timmerman Taisen, Ratger
Godet, Ludovik
Meyer Timmerman Taisen, Ratger
Application Number:
JP2021567794A
Publication Date:
November 21, 2023
Filing Date:
May 13, 2020
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
G02B5/18; G02B27/02
Domestic Patent References:
| JP2002189112A | ||||
| JP2005309441A | ||||
| JP2010085625A | ||||
| JP3246510A | ||||
| JP2005004068A |
Foreign References:
| US20180095201 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation