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Title:
配向されたカーボンナノチューブの成長方法
Document Type and Number:
Japanese Patent JP5014600
Kind Code:
B2
Abstract:
The procedure for growing carbon nanotubes on a sample (16) using a target (15) of carbon or a variety of carbon in a chamber containing a plasma has the sample placed in contact with the target, both of which have a free surface, with the plasma initiating the nanotube growth on the free surface of the sample. The plasma is of hydrogen or a mixture of gases containing hydrogen and at least one rare gas such as argon, krypton or xenon. The mixture can also contain nitrogen, ammonia and a carbonic gas such as carbon monoxide or acetylene.

Inventors:
Jean Dijon
Helene Le Poche
Thomas Goislar de Montsabert
Application Number:
JP2005198112A
Publication Date:
August 29, 2012
Filing Date:
July 06, 2005
Export Citation:
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Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
C01B31/02; H01J9/02
Domestic Patent References:
JP11011917A
JP2001048512A
JP2001262343A
JP2003137521A
JP2001236879A
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro



 
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