Title:
ハイブリッド装置とその製造方法
Document Type and Number:
Japanese Patent JP5086065
Kind Code:
B2
Abstract:
A hybrid assembly having improved cross talk characteristics comprises an electromagnetic band gap (EBG) layer (612) on a substrate (101) having an upper surface (111) and a lower surface and a semiconductor structure (MMIC) (602) mounted above teh EBG layer. A plurality of stars (400,402) made of an EBG material are preferably printed, or deposited, on the upper surface (111). The EBG material has slow wave characteristics. The plurality of stars teeellates the upper surface between conductive paths. Each of the stars has a center section (408) formed from a regular polygon, the center section having projections extending from the center section. The projections and the center section form a periphery. The periphery engages adjacent stars along the periphery. Stars are separated from adjacent starts by an interspace. Each of the stars is connected to a conductive via (604, 606), in turn connected to ground potential. A conductive layer (307) at ground potential is electrically continuous with vias (604, 606) used to interconnect all stars forming the EBG layer.
Inventors:
Tonomura, Samuel Dee.
Application Number:
JP2007502790A
Publication Date:
November 28, 2012
Filing Date:
October 18, 2004
Export Citation:
Assignee:
RAYTHEON COMPANY
International Classes:
H01L23/12; H01L23/498; H01L23/50; H01L23/552; H01L23/66; H01P1/16; H01Q15/00; H05K1/02
Domestic Patent References:
| JP56010951A | ||||
| JP2007527629A |
Foreign References:
| US20030071763 |
Attorney, Agent or Firm:
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa
Ryo Hashimoto
Tetsuya Kazama
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa
Ryo Hashimoto
Tetsuya Kazama