PURPOSE: To provide a method of making a silicon wafer which can prevent warp of a wafer and also form a gettering site having large gettering effects in a method of manufacturing the silicon wafer having a gettering site for gettering a heavy metal, etc., inside a substrate.

CONSTITUTION: While applying tensile stress in the direction equivalent to the <111> direction or <111> direction of a silicon substrate 12 or an ingot, the ingot is heated in a gas atmosphere containing hydrogen, and thereafter the ingot is cooled while the stress is applied.