Title:
【発明の名称】半導体素子の配線形成方法
Document Type and Number:
Japanese Patent JP2942231
Kind Code:
B2
Abstract:
A method for forming a metal line of a semiconductor device is suitable for forming a conductive material with strong connection force, by irradiating the region between metals to be connected with each other, with laser beams. It comprises the steps of: forming a plurality of metal lines on a substrate; depositing a first conductive material over the substrate including the metal lines; irradiating the first conductive material between the metal lines to be connected, with laser beams, before forming a second conductive material; and removing the first conductive material excluding the second conductive material.
Inventors:
KAN DON MAN
KAN JON HO
KAN JON HO
Application Number:
JP1018398A
Publication Date:
August 30, 1999
Filing Date:
January 22, 1998
Export Citation:
Assignee:
ERU JII SEMIKON CO LTD
International Classes:
H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/525; H01L23/532; (IPC1-7): H01L21/3205
Domestic Patent References:
| JP1307243A | ||||
| JP627165A |
Attorney, Agent or Firm:
Hironobu Onda