Title:
【発明の名称】薄膜トランジスタの作製方法
Document Type and Number:
Japanese Patent JP2700277
Kind Code:
B2
Abstract:
A process for fabricating thin film transistors (TFTs) which comprises a two-step laser annealing process in which crystallization of the channel portion of a TFT is effected by irradiating the channel portion with an irradiation beam, for example from an excimer laser, and modification of the electric properties of the source and the drain regions of the TFT is effected by irradiating the source and the drain regions with an irradiation beam in a step independent of the step of crystallizing the channel portion. The process is carried out at low temperature and enables TFTs to be produced effectively and economically without risk of contamination by substrate impurities and with good expectation of a long operational lifetime.
Inventors:
Hiroyuki Zhang
Application Number:
JP14506990A
Publication Date:
January 19, 1998
Filing Date:
June 01, 1990
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/268; H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/336
Domestic Patent References:
| JP63292682A | ||||
| JP6239067A | ||||
| JP63200572A | ||||
| JP63250178A | ||||
| JP58164267A | ||||
| JP558026A |