Title:
【発明の名称】スパッタ形状シミュレーション方法
Document Type and Number:
Japanese Patent JP2888240
Kind Code:
B1
Abstract:
The present invention provides a sputter profile simulation method which reduces a calculation time. The method comprises the steps of calculating sputter trajectories of particles emitted from a sputter target; projecting the sputter trajectories onto one or more first planes; extracting an outline of a contact hole on a second plane parallel to one of the first planes; defining two shadow points preventing the particles from going to a film-growth calculation coordinates point; and judging that, out of the sputter particle trajectories projected on the first plane, the sputter trajectories between two lines as film-growth contributing trajectories, the two lines joining the film-growth calculation coordinates point to each of the two shadow points.
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Inventors:
Hiroaki Yamada
Application Number:
JP8001898A
Publication Date:
May 10, 1999
Filing Date:
March 26, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/203; C23C14/34; G06F17/00; G06F17/50; G06F19/00; G06G7/48; G06Q50/00; G06Q50/04; H01L21/00; H01L21/285; (IPC1-7): C23C14/34; G06F17/00; H01L21/203; H01L21/285
Domestic Patent References:
| JP652269A | ||||
| JP8274084A | ||||
| JP7176495A | ||||
| JP56868A | ||||
| JP10306371A | ||||
| JP925572A |
Other References:
【文献】特許2718385(JP,B2)
Attorney, Agent or Firm:
Masanori Fujimaki