SEMICONDUCTOR DEVICE - SEIKO EPSON CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0621058

Kind Code:

A

Abstract:

PURPOSE: To provide a semiconductor device in which a connection to an exterior is performed by a similar connecting method to that of prior art without using a special method even if a wiring layer is formed of high melting point metal and which has sufficient adhesive properties and low manufacturing cost.

CONSTITUTION: W (tungsten) 102 is sputtered on a semiconductor substrate 101, a resist pattern is formed, the W 102 is etched, the resist is removed, and a wiring layer is formed. Then, an Si3N4 film 103 is formed by a plasma CVD method, a resist pattern is formed, the film 103 is etched by dry etching, the resist is removed, an opening is formed, an Al film 104 is formed as a pad electrode, a resist pattern is formed, the film 104 is etched, the resist is removed and the pad for connecting to an exterior is completely formed.

Inventors:

YOKOYAMA KENJI

Application Number:

JP17789592A

Publication Date:

January 28, 1994

Filing Date:

July 06, 1992

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L21/60; H01L21/3205; H01L21/768; H01L23/52; H01L23/522; (IPC1-7): H01L21/3205; H01L21/60; H01L21/90

Attorney, Agent or Firm:

Kisaburo Suzuki (1 outside)

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