PURPOSE: To obtain a leak path circuit with a high leakage capability and less power consumption.

CONSTITUTION: A resistor R21 and a P-channel MOS transistor (TR)22 are connected in series in a leakage path between a node N12 and a ground 60. Other terminal of a capacitor C21 whose one terminal is connected with a power supply 50 is connected at a node N22 with a gate of the TR 22. A gate of the TR 22 is connected at the node N22 with a source of a P-channel MOS TR 21 whose gate and drain are connected with ground. Since the node N22 is a threshold voltage of the TR 21 in the normal state, the impedance of the TR 22 becomes higher and a leakage current is less. When a potential of the power supply 50 decreases, the potential at the node N22 is decreased and the TR 22 is turned on, the impedance of the TR 22 is decreased and a leakage current is increased.