To provide an image display using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and to provide method for manufacturing the image display and a polycrystalline semiconductor layer constructed so that impurity concentrations are easy to be controlled in LDD regions.
In this image display using transistors each having a polycrystalline semiconductor layer and a gate electrode is formed through an insulating film on the upper surface of the polycrystalline semiconductor layer, and a drain region is formed on one side of the gate electrode of the polycrystalline semiconductor layer, and a source region is formed on another side of the gate electrode of the polycrystalline semiconductor. An activated p-type impurity is doped to a region underlying the gate electrode of the polycrystalline semiconductor layer, and the activated n-type impurity is doped to a region excluding an area underlying the gate electrode.
SAITO KATSUTOSHI
OKURA OSAMU
TAKASAKI YUKIO
YAMAMOTO MASANAO
HITACHI DEVICE ENG