Title:
IMAGE SENSOR USING TRANSFER GATE SIGNAL HAVING THREE VOLTAGE LEVELS, AND METHOD OF OPERATING THE SAME
Document Type and Number:
Japanese Patent JP2023008838
Kind Code:
A
Abstract:
To provide an image sensor configured to suppress degradation of image quality due to unintended charging or discharging of charges in a floating diffusion node.SOLUTION: An image sensor includes a photodiode PD and a pixel PIX including a transfer transistor MT and a reset transistor MR. An operation method includes the steps of: accumulating first charges through a photo diode; applying a first transfer gate signal TG having a first voltage level to the transfer transistor; performing, through the reset transistor, a first reset operation on a floating diffusion node FD; changing the first voltage level of the first transfer gate signal to a second voltage level higher than the first voltage level, during the first reset operation; changing the changed second voltage level to a third voltage level higher than the second voltage level; and changing the third voltage level to the second voltage level after diffusing the first charges to the floating diffusion node through the transfer transistor.SELECTED DRAWING: Figure 4
Inventors:
CHO JEONGJIN
LEE KYUNG-HO
JUNG TAE SUB
LEE KYUNG-HO
JUNG TAE SUB
Application Number:
JP2022095923A
Publication Date:
January 19, 2023
Filing Date:
June 14, 2022
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H04N25/626; H01L27/146; H04N25/68
Attorney, Agent or Firm:
Patent Attorney Corporation Kyosei International Patent Office
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