Title:
改善した半導体放射線検出器
Document Type and Number:
Japanese Patent JP7078769
Kind Code:
B2
Abstract:
A semiconductor radiation detector device comprises a semiconductor substrate (100). On one surface of the substrate are a MIG layer (241) of semiconductor of second conductivity type, a barrier layer (251) of semiconductor of first conductivity type, and pixel dopings (921, 922) of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create a source and a drain of a pixel-specific transistor. The device further comprises a first conductivity type first contact, so that said pixel voltage is a potential difference between one of the pixel dopings and the first conductivity type first contact. The location of a main gate (983) corresponds at least partly to the location of a channel between the source and the drain. The device comprises at least one extra gate (981, 982) horizontally displaced from the main gate (983).
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Inventors:
Alt Aurora
Application Number:
JP2021033437A
Publication Date:
May 31, 2022
Filing Date:
March 03, 2021
Export Citation:
Assignee:
Alt Aurora
International Classes:
H01L27/146; G01T1/24; H01L21/336; H01L27/144; H01L29/78
Domestic Patent References:
| JP2012190951A | ||||
| JP2009522821A | ||||
| JP2008511132A | ||||
| JP20114370A | ||||
| JP2009152234A | ||||
| JP2004274009A |
Attorney, Agent or Firm:
Aoki Atsushi
Ishida Kei
Tetsuji Koga
Satoshi Deno
Naonori Koda
Saito Tsuko
Ishida Kei
Tetsuji Koga
Satoshi Deno
Naonori Koda
Saito Tsuko
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