Title:
セル内バイパスダイオード
Document Type and Number:
Japanese Patent JP6930707
Kind Code:
B2
Abstract:
A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.
Inventors:
Rim, Seven
Harley gabriel
Harley gabriel
Application Number:
JP2016558210A
Publication Date:
September 01, 2021
Filing Date:
May 22, 2015
Export Citation:
Assignee:
Sunpower corporation
International Classes:
H01L31/0443
Domestic Patent References:
| JP2013543279A | ||||
| JP2000091616A | ||||
| JP57138184A | ||||
| JP2012526396A | ||||
| JP2008103720A | ||||
| JP2007110123A | ||||
| JP9064397A |
Foreign References:
| US4612408 | ||||
| US20120318321 | ||||
| US20100089435 | ||||
| US20130276872 | ||||
| US20070089774 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation