Title:
In sputtering target
Document Type and Number:
Japanese Patent JP6217295
Kind Code:
B2
Abstract:
Provided is an In sputtering target having a composition containing a total of 0.5 to 10.0 atom% of at least one type of element selected from the group consisting of Bi, Sb, Sn, and Zn, the remainder comprising In and unavoidable impurities.
Inventors:
Keita Umemoto
Zhang Mamoru
Shinji Kato
Zhang Mamoru
Shinji Kato
Application Number:
JP2013209977A
Publication Date:
October 25, 2017
Filing Date:
October 07, 2013
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C14/34; C23C14/14; H01L31/0749
Domestic Patent References:
| JP2012172265A | ||||
| JP2000121824A | ||||
| JP11236664A | ||||
| JP2012509397A | ||||
| JP2012132101A | ||||
| JP2013512342A | ||||
| JP2013095965A | ||||
| JP2004068054A |
Foreign References:
| CN103194722A |
Attorney, Agent or Firm:
Kageyama Shuichi
Masayuki Miyake
Kurachi Yasuyuki
Kazuo Tomita
Masayuki Miyake
Kurachi Yasuyuki
Kazuo Tomita