Title:
INDUCTIVE ELEMENT FOR SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH11274412
Kind Code:
A
Abstract:
To provide an inductive element which can reduce the leakage current to a substrate, by reducing the parasitic capacitance generated between a conductor constituting an inductor and the substrate.
The surface area of a silicon substrate 10 having conductivity is reduced by forming a trench having a prescribed depth and a prescribed width on the surface of the substrate 10 and filling up the trench 15 with an insulating material 20 having low conductivity. Then a spiral conductor 40 constituting an inductor is formed on the surface of the substrate 10 with first and second insulating layers 25 and 35 in between.
Inventors:
ZEN TOHIN
LEE SANG G
RI SOO
LEE SANG G
RI SOO
Application Number:
JP28487798A
Publication Date:
October 08, 1999
Filing Date:
October 07, 1998
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/76; H01L21/822; H01L27/04; (IPC1-7): H01L27/04; H01L21/76; H01L21/822
Attorney, Agent or Firm:
Hagiwara Makoto
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