PURPOSE: To realize an infrared detector with less generation of crosstalk by forming an inversion layer on the surface of a P-type Hg1-xCdxTe layer between edge parts of an N-type Hg1-xCdxTe layer which become picture elements.
CONSTITUTION: An anode oxide film 11 which cannot be attached easily by an etching chemical is selectively formed on a forming part of a contact hole 6 of mesa-shaped or planar-type N-type Hg1-xCdxTe layers 3 and 9 which become picture elements. Then, since the anode oxide film 11 is selectively formed at a specified position between edge parts of mesa or planar-type layers 3 and 9 which become picture elements, an inversion layer 12 is formed selectively at the lower P-type Hg1-xCdxTe layer 2 and a minority carrier electron 8 is absorbed, thus preventing the minority carrier electron 8 from reaching the adjacent mesa-shaped or planar-type layers 3 and 9 through the surface of the P-type Hg1-xCdxTe layer 2 due to diffusion and obtaining a highly reliable infrared ray detection element with less generation of crosstalk.
MIYAMOTO YOSHIHIRO
YAMAMOTO TAMOTSU
