Title:
INFRARED RAY SENSOR
Document Type and Number:
Japanese Patent JPH04134223
Kind Code:
A
Abstract:
PURPOSE:To simplify constitution and improve productivity by integratedly forming a liquid crystal shutter and an infrared rays detection part (ferroelectricity thin film). CONSTITUTION:Rectangular voltage is applied between silicone substrates 20 and 21 at a given period in a liquid crystal shutter 24. The drive voltage is applied to a lead pin 25, and supplied to a first silicone substrate 20 via a wire 26. A lead pin 27 is earthed and electrically connected to a second silicon substrate 21 with a wire 28. This passes or intercepts infrared rays entering in the shutter 24 with the orientation direction of a liquid crystal molecule changed. A ferroelectricity thin film 29 is formed on the surface of the substrate 21 by a sputter method. Polarization treatment is applied to the film thickness of the thin film 29, which acts as a pyroelectricity element. A lead pin 30 is electrically connected to the surface side of the thin film 29, and detection output is extracted. Thus the thin film 29, as a pyroelectricity element, is directly formed on the substrate 21, allowing a low height dimension.
Inventors:
TANAKA TOSHIHARU
SHIBATA KENICHI
SAKATA MASAKAZU
KUROKI KAZUHIKO
SHIBATA KENICHI
SAKATA MASAKAZU
KUROKI KAZUHIKO
Application Number:
JP25768490A
Publication Date:
May 08, 1992
Filing Date:
September 26, 1990
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
G01J1/02; G01J1/04; G01J5/02; G01J5/34; (IPC1-7): G01J1/02; G01J1/04; G01J5/02
Attorney, Agent or Firm:
Koji Yasutomi (1 person outside)