Title:
INP SEMICONDUCTOR THIN FILM
Document Type and Number:
Japanese Patent JPH01120011
Kind Code:
A
Abstract:
PURPOSE:To produce an InP semiconductor thin film which comprises an InP single crystal layer with better crystallinity, by superposing GaAs layers and InP layers in this order on a silicon substrate so that such problems of the crystal defects and the surface roughness resulting from the lattice mismatching in the conventional InP semiconductor thin film are settled. CONSTITUTION:GaAs layers and InP layers are formed in this order on a silicon substrate 1. For example, a first GaAs buffer layer 2 and a GaAs single crystal layer 3 are in this order grow on the silicon substrate 1 which has (100) plane on the surface thereof, in crystals, respectively. Next, a second GaAs buffer layer 4, an InP buffer layer 5 and an InP single crystal layer 6 are in this order grown on said GaAs single crystal layer 3, in crystals, respectively. Therefore, in the InP semiconductor thin film having the above structure, the lattice mismatching can be more effectively relaxed and the generation of the crystal defects can be more sufficiently prevented, compared with the conventional InP semiconductor thin film in which an InP single crystal layer is grown directly on the silicon substrate. Accordingly, the InP single crystal layer of which the crystallinity is very good can be produced.
Inventors:
HORIKAWA HIDEAKI
KAWAI YOSHIO
OGAWA HIROSHI
WADA HIROSHI
KAWAI YOSHIO
OGAWA HIROSHI
WADA HIROSHI
Application Number:
JP27568487A
Publication Date:
May 12, 1989
Filing Date:
November 02, 1987
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/20; H01L21/205; (IPC1-7): H01L21/20; H01L21/205
Domestic Patent References:
| JPS6453407A | 1989-03-01 |
Attorney, Agent or Firm:
Toshiaki Suzuki
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