INSPECTING METHOD OF SEMICONDUCTOR WAFER

Japanese Patent JPS6010637

A

PURPOSE:To inspect the propriety of a semiconductor wafer by oxidizing the wafer, removing the oxidized film, then etching the surface, measuring the reflection coefficient of the surface, and comparing it with that in a mirror-surface state. CONSTITUTION:After a silicon wafer is washed, it is oxidized for 1hr in a wet atmosphere of 1,100 deg.C. Then, it is dipped in aqueous fluoric acid solution to remove the oxide, and the surface of the wafer is then etched. The wafer surface is measured for the transmission factor T by a known infrared spectral photometric method. When the incident light intensity to the wafer is represented by I0, the transmission light intensity from the wafer by I, the absorption coefficient by alpha, and the thickness of the wafer by t, there is the relationship of the formula between the factor T and the reflection coefficient R. When the surface of the silicon wafer is mirror-polished, the coefficient R is approx. 30%. If shallow pit is, on the other hand, formed on the surface, it becomes 30-50%. Thus, the whitening degree of the sensitivity test can be quantified.

OOSAWA AKIRA
HONDA KOUICHIROU
TAKIZAWA RITSUO

JP11905083A

January 19, 1985

June 30, 1983

Click for automatic bibliography generation  

FUJITSU LTD

H01L21/66; (IPC1-7): H01L21/66

Koshiro Matsuoka

Previous Patent: The method and system which restore groundwater by the micro/nano bubble in an original position

Next Patent: JPS6010638