Title:
Insulated gate type semiconductor device
Document Type and Number:
Japanese Patent JP6109098
Kind Code:
B2
Inventors:
Yuji Murakami
Hidetada Tokugawa
Akihiko Furukawa
Takeshi Kawakami
Okuda Satoshi
Hidetada Tokugawa
Akihiko Furukawa
Takeshi Kawakami
Okuda Satoshi
Application Number:
JP2014028303A
Publication Date:
April 05, 2017
Filing Date:
February 18, 2014
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/739; H01L21/20; H01L21/322; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2012129375A | ||||
| JP2007288026A | ||||
| JP9092826A | ||||
| JP2010232627A | ||||
| JP2004039893A | ||||
| JP2003007615A |
Foreign References:
| WO2013136898A1 | ||||
| WO2013141221A1 |
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mikio Takeuchi
Haruo Nakano
Mitsuo Tanaka
Mikio Takeuchi
Haruo Nakano
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