Title:
INTEGRATED CIRCUIT WITH RESISTANCE ELEMENT
Document Type and Number:
Japanese Patent JPS51128278
Kind Code:
A
Abstract:
PURPOSE: Applying multicrystal silicon layer including oxygen as surface protection film of MOSFET, connecting a part of the multicrystal silicon layer with conductor layer having chmic contact and gate electrode, the layer thus formed is used as protection resistance.
Inventors:
SUZUKI KUNIZOU
Application Number:
JP5273475A
Publication Date:
November 09, 1976
Filing Date:
April 30, 1975
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L27/04; H01L21/822; H01L27/06; H01L29/78; (IPC1-7): H01L27/04; H01L29/78