PURPOSE: To provide a intermediate-potential generating circuit, which can output the intended intermediate potential highly accurately.

CONSTITUTION: A reverse-conductivity type well 12 is formed on the surface part of unilateral semiconductor substrate 11. A first potential Vcc and a second potential Vss are applied on both end parts of the well 12. A unilateral diffused layer 16 is formed on the surface part of the well 12. The first potential Vcc and the second potential Vss are applied on both end parts of the layer 16. An intermediate potential terminal is connected to the arbitrary region of the diffused layer 16 and outputs the intended intermediate potential between the first potential Vcc and the second potential Vss. These parts are provided.