PURPOSE: To provide an ion beam etching device, which can be used in combination a microwave ion source having a large leakage magnetic field with a plasma bridge type neutralizing device and is long-lived to active gas.
CONSTITUTION: A first solenoid coil 5 is used for producing plasma, which is a microwave ion source. A second solenoid coil 13 is located on the same axis as that of the coil 5 and generates a magnetic field in the opposite direction to the direction of the coil 5 to form a cusp field. A plasma bridge type neutralizing device 14 is provided on the periphery of an ion beam 19 and is arranged on a plane A-A including a ring cusp of the cusp field or on its downstream side. As electrons 20 extracted from the device 14 are diffused in the side of a sample along a line of magnetic force which is formed by the, coil 13, the efficiency, which contributes to a neutralization of the sample 12, of the electrons 20 led out from the device 14 is increased.
| JPS6332925 | ASHING APPARATUS |
| JPH0674509 | [Title of Invention] Erosion device |
ICHIMURA SATOSHI
ONO YASUNORI
NATSUI KENICHI
