ION IMPLANTATION DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD EMPLOYING IMPLANTATION OF BORON HYDRIDE CLUSTER IONS

Title:

ION IMPLANTATION DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD EMPLOYING IMPLANTATION OF BORON HYDRIDE CLUSTER IONS

Document Type and Number:

Japanese Patent JP2010262930

Kind Code:

A

Abstract:

To provide a magnetic field device for creating a uniform magnetic field to an electron beam passage in an ionization chamber.

In the magnetic field device for an electron impact ion source, a magnetic flux created by a pair of permanent magnets 510A, 510B is set up to return through a gap between magnetic pole pieces 520A, 520B with a pair of aligned openings 530A, 530B for passing an electron beam via a magnetic yoke assembly 500 in order to create a uniform magnetic flux line 119 in the electron beam passage in the ionization chamber.

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Inventors:

HORSKY THOMAS N
JACOBSON DALE C

Application Number:

JP2010113032A

Publication Date:

November 18, 2010

Filing Date:

May 17, 2010

Export Citation:

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Assignee:

SEMEQUIP INC

International Classes:

H01J27/20; H01J37/08; H01J37/317; H01L21/00; H01L21/265; H01L21/336; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092; H01L29/78; H01L29/786

Domestic Patent References:

JPH0131257B2

1989-06-23

Attorney, Agent or Firm:

Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima

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