Title:
ION IMPLANTER AND OPERATION METHOD OF ION IMPLANTER
Document Type and Number:
Japanese Patent JP2014137899
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To improve non-uniform dose distribution in a substrate plane due to a missing ion beam, and to improve productivity of an ion implanter.SOLUTION: An ion implanter includes a plasma generating container 1, an extraction electrode system 2 consisting of a plurality of electrodes for extracting a ribbon-like ion beam 3 from the plasma generating container 1, and a processing chamber 5 for processing a substrate 4. The ion implanter irradiates the entire surface of the substrate 4 with the ion beam 3 by scanning the substrate 4 in a direction crossing the traveling direction of the ion beam 3 in the processing chamber 5, and includes a controller 20 for detecting abnormal discharge in the extraction electrode system 2 during ion implantation process on the substrate 4, and decelerating the scanning speed of the substrate 4 after the abnormal discharge is detected before restoring from the abnormal discharge.
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Inventors:
MATSUMOTO TAKESHI
Application Number:
JP2013005749A
Publication Date:
July 28, 2014
Filing Date:
January 16, 2013
Export Citation:
Assignee:
NISSIN ION EQUIPMENT CO LTD
International Classes:
H01L21/265; H01J37/317