To make ion implantation possible even when a raw material of ions intended to be implanted into a substrate is a solid such as chromium, iron or carbon, and to achieve a sufficient effect by ion implantation.
For the ion implanter comprising a vacuum container 1, a holding stand 4 for holding a substrate 3 provided insulatingly from the vacuum container within the vacuum container 1 and a power source 6 of pulse high voltage for applying negative pulse voltage to the substrate 3, in which an ion is implanted into the surface of the substrate to make surface improvement or form a film, a vapor or plasma generating source 7 for generating vapor or plasma of a raw material to be implanted into the surface of the substrate is provided, and a discharge section 9 for accelerating ionization of the vapor or plasma is provided in the middle of a transport tube 8 through which the vapor or plasma generated by the vapor or plasma generating source 7 is guided to the substrate 3.
ASANO SHIRO
SUGAWARA TORU
SAITO TAKESHI
WATANABE TOSHIYUKI
SEKI KATSUHIKO
TOSHIBA TUNGALOY CO LTD