Title:
ION IMPLANTING DEVICE
Document Type and Number:
Japanese Patent JPH07105902
Kind Code:
A
Abstract:
PURPOSE: To provide an ion implanting device which does not modify a resist mask at implanting of ions.
CONSTITUTION: A temp. sensor 12 is installed on a platen 11, and the voltage impressed on a Y-deflecting plate 17 is varied by an interlock device 13 when the temp. is exceeding the set level, and a scanning power supply 16 is controlled so that a wafer W is free from irradiation with ion beam B. This prevents a resist on the wafer W from being modified due to heating.
Inventors:
OKUDA MASAHIRO
Application Number:
JP24491793A
Publication Date:
April 21, 1995
Filing Date:
September 30, 1993
Export Citation:
Assignee:
SONY CORP
International Classes:
H01J37/317; H01L21/265; (IPC1-7): H01J37/317; H01L21/265
Attorney, Agent or Firm:
Fujiya Shiga (1 person outside)
Previous Patent: Transformer injection type, injection shoe material and its manufacturing method
Next Patent: 映像信号送出／受像システム
Next Patent: 映像信号送出／受像システム