Title:
JOSEPHSON INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPS6047477
Kind Code:
A
Abstract:
PURPOSE:To enable to obtain a circuit of high degree of integration having stabilized characteristics by a method wherein MoN is used as the material for a superconductive electrode. CONSTITUTION:MoN to be turned to a lower electrode 2 and a resistance film 3 is formed on an Si substrate 1. An etching is performed on the MoN film using a photoresist as a mask. Then the entire MoN film pattern, excluding the part where a thin film resistor will be formed, is coated by photoresist and N-ions are implanted thereon. As a result, the MoN film at the ion-implanted part can be used as a thin film resistor 3. Then, an insulating film 4 is formed, a tunnel barrier 5 consisting of an Si film is formed and subsequently, an upper electrode 6 consisting of an MoN film is formed. As the MoN thin film of high superconductive transition temperature of 12 deg.K is used in the Josephson integrated circuit formed as above, it is excellent in the operational stability when used at 4.2 deg.K, and also the mask matching margin for connection of the resistor and the superconductive electrode or the occupation area to be used for formation of a connection part can be brought to zero.
Inventors:
NISHINO JIYUICHI
Application Number:
JP15484383A
Publication Date:
March 14, 1985
Filing Date:
August 26, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L39/22; (IPC1-7): H01L39/22
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)