LASER ANNEALING METHOD FOR NON-SINGLE CRYSTAL THIN FILM

Title:

LASER ANNEALING METHOD FOR NON-SINGLE CRYSTAL THIN FILM

Document Type and Number:

Japanese Patent JPH11330000

Kind Code:

A

Abstract:

To enhance yield of an element, which is manufactured by using a crystallized thin film, by reducing uneven crystallization while using a currently used pulse laser beam.

In a method whereby a pulse laser beam 1 is allowed to scan a non-single crystal thin film 2 on a substrate 4 and superposed irradiation is performed thereon so as to achieve crystallization, the pulse laser beam 1 is emitted at an angle α of 5 to 85° formed by a major axis direction and the scanning direction of the pulse laser beam 1, and crystallization is carried out. In this case, regarding the pulse laser beam, when a ratio of a major axis diameter and a minor axis diameter is 100 or more, a scanning pitch for each irradiation is d, and an angle is α, d.cosα is 2 μm or more. Further, the pulse laser beam has a space average intensity of 200 to 400 mJ/cm2.

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Inventors:

MAEKAWA SHIGEKI
YOSHIOKA TATSUO
KOBAYASHI IKUNORI

Application Number:

JP12936598A

Publication Date:

November 30, 1999

Filing Date:

May 13, 1998

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/20; H01L21/268; (IPC1-7): H01L21/268; H01L21/20

Attorney, Agent or Firm:

Yoshihiro Morimoto

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