Title:
LASER IRRADIATION SYSTEM AND APPLICATION THEREOF
Document Type and Number:
Japanese Patent JP3763908
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To solve the annealing effect uniformity of a large area by removing an impurity film from a semiconductor thin-film surface, before irradiating of a laser beam.
SOLUTION: In a heating chamber 309, a robot arm 302 carries samples one after another and carries them out in the same timing. The robot arm carries the samples carried out from the heating chamber 309 into an etching chamber 315, wherein the sample is laid on a spinner 316 and an etching liq. is dropped from a nozzle 317 on the sample to etch an amorphous Si surface, thereby removing an oxide film. Then pure water is sprayed from other nozzle to clean the sample, and it is dried. This solves the annealing-effect nonuniformity of a large area and prevents the energy density variation of a laser beam.
Inventors:
Naoto Kusumoto
Shunpei Yamazaki
Shunpei Yamazaki
Application Number:
JP30595796A
Publication Date:
April 05, 2006
Filing Date:
October 30, 1996
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/268; H01L21/02; H01L21/20; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L21/268; H01L27/12; H01L29/786; H01L21/336
Domestic Patent References:
| JP6260436A | ||||
| JP7153684A | ||||
| JP8023105A |
Foreign References:
| WO1995034916A1 |
Previous Patent: METHOD FOR MONITORING SIGNAL MESSAGE IN COMMUNICATION NETWORK
Next Patent: HOT WATER SUPPLY SYSTEM
Next Patent: HOT WATER SUPPLY SYSTEM