Title:
レーザシステムおよび非線形光学結晶の製造方法
Document Type and Number:
Japanese Patent JP7170686
Kind Code:
B2
Abstract:
The present invention includes an exposure chamber configured to contain a passivating gas having a selected hydrogen concentration, the exposure chamber further configured to contain at least one NLO crystal for exposure to the passivating gas within the chamber, a passivating gas source fluidically connected to the exposure chamber, the passivating gas source configured to supply passivating gas to an interior portion of the exposure chamber, and a substrate configured to hold the NLO crystal within the chamber, the substrate further configured to maintain a temperature of the NLO crystal at or near a selected temperature, the selected temperature being below a melting temperature of the NLO crystal.
Inventors:
Chuan Yoon-ho
Dribinsky Vladimir
Dribinsky Vladimir
Application Number:
JP2020080419A
Publication Date:
November 14, 2022
Filing Date:
April 30, 2020
Export Citation:
Assignee:
KLA Corporation
International Classes:
G02F1/37; C30B29/22; C30B33/02; H01S3/10
Domestic Patent References:
| JP2001109027A | ||||
| JP2011507305A | ||||
| JP5011287A | ||||
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| JP2011158869A | ||||
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Foreign References:
| US20030011872 | ||||
| WO2007138983A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation YKI International Patent Office