Title:
レーザ溶接方法および半導体装置とその製造方法
Document Type and Number:
Japanese Patent JP5453720
Kind Code:
B2
Abstract:
To provide a laser welding method by which, even if an upper side member has a small heat capacity and the vicinity of a weld portion is a body of small heat capacity, high joining strength is obtained, and a semiconductor device, and its manufacturing method.
When superimposing an upper side member 5, which has a small heat capacity, on a lower side member 1 and laser welding them, a heat transfer probe 8 for heatsinking a heat generated in welding is pressed against the vicinity of a laser weld portion 6. Thereby, melt rising of a weld part 9 is prevented and a joining area is secured, so that high joining strength is obtained.
COPYRIGHT: (C)2009,JPO&INPIT
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Inventors:
Katsuhiko Yoshihara
Application Number:
JP2008034297A
Publication Date:
March 26, 2014
Filing Date:
February 15, 2008
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
B23K26/21; B23K26/32; B23K26/60; B23K26/70; B23K31/00; H01L23/48; B23K101/40
Domestic Patent References:
| JP4137380A | ||||
| JP6238366A | ||||
| JP2003290950A | ||||
| JP2005246433A | ||||
| JP2006068808A | ||||
| JP2007227893A |
Attorney, Agent or Firm:
Yoichi Matsumoto