Title:
LEAK DETECTION METHOD FOR INSULATING FILM
Document Type and Number:
Japanese Patent JP3307121
Kind Code:
B2
Abstract:
PURPOSE: To suppress failure in detection by removing a wiring film through etching to expose the surface of a semiconductor layer on an insulating film through a contact hole thereby exposing the surface of a semiconductor layer to be observed without requiring any mechanical abrasion and shortening the time required for detecting a leak.
CONSTITUTION: A semiconductor layer 4 is provided on an insulating film 3, an interlayer film 5 is provided on the semiconductor layer 4, a contact hole 6 for exposing the surface of the semiconductor layer 4 is made through the interlayer film 5 and a wiring film 7 is connected through the contact hole 6 with the interlayer film 5. Presence of leak in the insulating film 3 of a semiconductor device is detected charging up the semiconductor layer on the insulating film 3 and observing variation in the brightness on the surface of the semiconductor layer 4. In this regard, the wiring film 7 is removed by etching to expose the surface of the semiconductor layer 4 through the contact hole 6. Under that state, the semiconductor layer 4 is charged up and the part exposed through the contact hole 6 is observed.
Inventors:
Tateshita Hasshushi
Application Number:
JP27596494A
Publication Date:
July 24, 2002
Filing Date:
October 13, 1994
Export Citation:
Assignee:
ソニー株式会社
International Classes:
G01R31/26; H01L21/66; (IPC1-7): H01L21/66; G01R31/26
Domestic Patent References:
| JP4154143A | ||||
| JP590374A | ||||
| JP7153410A | ||||
| JP888258A | ||||
| JP3283544A |
Attorney, Agent or Firm:
Hideaki Ogawa