Title:
発光デバイス及び半導体装置
Document Type and Number:
Japanese Patent JP4612671
Kind Code:
B2
Abstract:
In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device which includes a substrate (1) formed from a Si material system, a Si1-x-yGexCy (0
Inventors:
Kenichi Kawaguchi
Application Number:
JP2007502504A
Publication Date:
January 12, 2011
Filing Date:
February 09, 2005
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L33/06; H01L33/00; H01L33/12; H01L33/30; H01L33/34
Domestic Patent References:
| JPH09326506A | 1997-12-16 | |||
| JP2003158074A | 2003-05-30 |
Foreign References:
| US5523592A | 1996-06-04 |
Attorney, Agent or Firm:
Yu Sanada