Title:
発光装置
Document Type and Number:
Japanese Patent JP6408235
Kind Code:
B2
Abstract:
Provided is a light-emitting device with a high aperture ratio. The light-emitting device includes a first substrate; a first insulating film over the first substrate; a first partition over the first insulating film; a second insulating film which covers the first insulating film and the first partition and which has a concave surface; a first electrode which is over the second insulating film and which has an edge portion at a position overlapping with the first partition; a second partition which is over the first partition and which overlaps with the edge portion of the first electrode; a layer containing a light-emitting organic compound over the first electrode and the second partition; a second electrode over the layer containing a light-emitting organic compound; and a second substrate which is over the second electrode and which overlaps with the first substrate.
Inventors:
Shunpei Yamazaki
Yoshiharu Hiragata
Toshio Ikeda
Yoshiharu Hiragata
Toshio Ikeda
Application Number:
JP2014068356A
Publication Date:
October 17, 2018
Filing Date:
March 28, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H05B33/22; G09F9/30; H01L27/32; H01L51/50; H05B33/02; H05B33/04; H05B33/12; H05B33/26; H05B33/28
Domestic Patent References:
| JP2008226483A | ||||
| JP2007227129A | ||||
| JP2007329448A | ||||
| JP2004103534A | ||||
| JP2010225325A |
Foreign References:
| WO2013038970A1 | ||||
| US20090174320 | ||||
| US20050046342 |