Title:
LIGHT-EMITTING DIODE ELEMENT
Document Type and Number:
Japanese Patent JP2012169323
Kind Code:
A
Abstract:
To achieve enhancement of light extraction efficiency from a window electrode layer, and reduction in the contact resistance of the window electrode layer in contact with p-type GaN simultaneously.
A single crystal n-type ITO transparent electrode film 11 contains Ga as well as In, has a mole ratio of Ga/(In+Ga) of 0.08-0.5, and a thickness of 1.1-55 nm. The light-emitting diode further comprises multiple single crystal ZnO rods 13 formed on a single crystal n-type ZnO transparent electrode film 12. Each tip of the single crystal ZnO rod is branched to have a shape of multiple needles. A downward protrusion is provided at each lower part of the single crystal ZnO rod.
Inventors:
NAGAO NOBUAKI
HAMADA TAKAHIRO
ITO TERUHIRO
KOMORI TOMOYUKI
HAMADA TAKAHIRO
ITO TERUHIRO
KOMORI TOMOYUKI
Application Number:
JP2011026830A
Publication Date:
September 06, 2012
Filing Date:
February 10, 2011
Export Citation:
Assignee:
PANASONIC CORP
International Classes:
H01L33/32; H01L33/06; H01L33/42
Attorney, Agent or Firm:
Hiroki Naito
Daisuke Nagano
Kentaro Fujii
Daisuke Nagano
Kentaro Fujii