Title:
LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPH04282875
Kind Code:
A
Abstract:
PURPOSE:To provide a double hetero light emitting diode formed on a p-type InP board allowing less optical absorption by the board without increasing the electric resistance of the board. CONSTITUTION:When a p-type InP board is designated by carrier concentration, the concentration of an An atom becomes too high. Thus, the characteristic of the p-type InP board is designated by the Zn atom concentration, which is 3X10<18>-7X10<18>cm<-3>, and a light emitting diode is formed on the board. The board is suitable for a light emitting diode which permits light to go out through the board.
Inventors:
TAKAHASHI MITSUO
Application Number:
JP7243991A
Publication Date:
October 07, 1992
Filing Date:
March 11, 1991
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L33/14; H01L33/20; H01L33/30; H01L33/38; H01L33/62; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Shigeki Kawase