Title:
LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS5928394
Kind Code:
A
Abstract:
PURPOSE:To obtain an element of a narrow width of emission spectrum and high density of photo output by a method wherein a multilayer film having wavelength selectivity is provided on one side of a light radiating part. CONSTITUTION:An N type InP 2, an InGaAs active layer 3, a P type InP 4, and a P type InGaAs 5 are superposed on an N type InP substrate 1, and an ohmic P type electrode 6 and N type electrode 7 are laid. In contact with the end surface of this LED, a SiO2 8 of the thickness of lambda/DELTAn (n: refractive index, lambda: wavelength), a MgF2 9 of lambda/4n, a ZnS 10 of lambda/4n, a MgF 11 of 2Xlambda/n, and a MgF2 12 of 10Xlambda/n are laminated as fixed. This multilayer thin film region becomes a 1.3mum band passage filter of a semi value width of approx. 100Angstrom , and becomes a high reflection mirror to wavelength except for that. This constitution enables to obtain an element which has a narrow width of emission spectrum and can perform high output action.
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Inventors:
FURUSE TAKAO
Application Number:
JP13902782A
Publication Date:
February 15, 1984
Filing Date:
August 10, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G02B5/28; H01L33/30; (IPC1-7): G02B5/28; H01L33/00
Attorney, Agent or Firm:
Uchihara Shin
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